STN3NF06
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см. техническую документацию
см. техническую документацию
27 шт. со склада г.Москва, срок 8-9 дней
290 руб.
от 2 шт. —
240 руб.
от 10 шт. —
192 руб.
Добавить в корзину 1 шт.
на сумму 290 руб.
Альтернативные предложения2
Описание
Электроэлемент
MOSFET, N CH, 60V, 4A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; Power D
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 4000 |
| Fall Time | 6 ns |
| Forward Transconductance - Min | 3 S |
| Height | 1.8 mm |
| Id - Continuous Drain Current | 4 A |
| Length | 6.5 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-223-3 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 3.3 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 70 mOhms |
| Rise Time | 18 ns |
| RoHS | Details |
| Series | N-channel STripFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 17 ns |
| Typical Turn-On Delay Time | 7 ns |
| Unit Weight | 0.008818 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 3.5 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Resistance | 0.007 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Threshold Voltage | 4V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-223 |
| Pin Count | 3 |
| Transistor Material | Si |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Fall Time: | 6 ns |
| Forward Transconductance - Min: | 3 S |
| Id - Continuous Drain Current: | 4 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-223-4 |
| Pd - Power Dissipation: | 3.3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10 nC |
| Rds On - Drain-Source Resistance: | 100 mOhms |
| Rise Time: | 18 ns |
| Series: | STN3NF06 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 17 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Automotive | No |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 4 |
| Maximum Drain Source Resistance (mOhm) | 100@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 3300 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | STripFET II |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 6 |
| Typical Gate Charge @ 10V (nC) | 10 |
| Typical Gate Charge @ Vgs (nC) | 10@10V |
| Typical Input Capacitance @ Vds (pF) | 315@25V |
| Typical Rise Time (ns) | 18 |
| Typical Turn-Off Delay Time (ns) | 17 |
| Typical Turn-On Delay Time (ns) | 7 |
| Вес, г | 9.07 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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