STB30NF20
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 шт. со склада г.Москва, срок 9-10 дней
440 руб.
Добавить в корзину 1 шт.
на сумму 440 руб.
Альтернативные предложения1
Описание
Электроэлемент
; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:125W Rohs Compliant: Yes |Stmicroelectronics STB30NF20
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | STripFET |
| Maximum Continuous Drain Current - (A) | 30 |
| Maximum Drain Source Resistance - (mOhm) | 75@10V |
| Maximum Drain Source Voltage - (V) | 200 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Power Dissipation - (mW) | 125000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Typical Gate Charge @ 10V - (nC) | 38 |
| Typical Gate Charge @ Vgs - (nC) | 38@10V |
| Typical Input Capacitance @ Vds - (pF) | 1597@25V |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Resistance | 75 mΩ |
| Maximum Drain Source Voltage | 200 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 125 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | D2PAK(TO-263) |
| Series | STripFET |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Width | 9.35mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 8.8 ns |
| Id - Continuous Drain Current: | 30 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 125 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 38 nC |
| Rds On - Drain-Source Resistance: | 75 mOhms |
| Rise Time: | 15.7 ns |
| Series: | STB30NF20 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 38 ns |
| Typical Turn-On Delay Time: | 35 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 2.5 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 372 КБ
Datasheet STB30NF20
pdf, 390 КБ
Datasheet STP30NF20
pdf, 386 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
