STD15NF10T4
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см. техническую документацию
см. техническую документацию
10 шт. со склада г.Москва, срок 9-10 дней
390 руб.
от 2 шт. —
300 руб.
от 5 шт. —
233 руб.
от 10 шт. —
210.42 руб.
Добавить в корзину 1 шт.
на сумму 390 руб.
Альтернативные предложения3
Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, 100В 23A 70Вт 0,065Ом TO252
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 17 ns |
| Forward Transconductance - Min | 12 S |
| Height | 2.4 mm |
| Id - Continuous Drain Current | 23 A |
| Length | 6.6 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 70 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 65 mOhms |
| Rise Time | 45 ns |
| RoHS | Details |
| Series | STD15NF10 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 49 ns |
| Typical Turn-On Delay Time | 60 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 6.2 mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 17 ns |
| Forward Transconductance - Min: | 12 S |
| Id - Continuous Drain Current: | 23 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 70 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 40 nC |
| Rds On - Drain-Source Resistance: | 65 mOhms |
| Rise Time: | 45 ns |
| Series: | STD15NF10T4 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 49 ns |
| Typical Turn-On Delay Time: | 60 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 23 A |
| Maximum Drain Source Resistance | 80 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 70 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V |
| Вес, г | 0.6 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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