STD1NK60T4
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Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, 600В 1A 30Вт 8,5Ом TO25 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 2500 |
Fall Time | 25 ns |
Forward Transconductance - Min | 1 S |
Height | 2.4 mm |
Id - Continuous Drain Current | 1 A |
Length | 6.6 mm |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TO-252-3 |
Packaging | Reel |
Pd - Power Dissipation | 30 W |
Product Category | MOSFET |
Qg - Gate Charge | 7 nC |
Rds On - Drain-Source Resistance | 8 Ohms |
Rise Time | 5 ns |
RoHS | Details |
Series | STD1NK60 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 19 ns |
Typical Turn-On Delay Time | 6.5 ns |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 6.2 mm |
кол-во в упаковке | 2500 |
Channel Type | N |
Maximum Continuous Drain Current | 1 A |
Maximum Drain Source Resistance | 8.5 Ω |
Maximum Drain Source Voltage | 600 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 3.7V |
Maximum Power Dissipation | 30 W |
Minimum Gate Threshold Voltage | 2.25V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | DPAK(TO-252) |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 7 nC @ 10 V |
Automotive | No |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 1 |
Maximum Drain Source Resistance (mOhm) | 8500@10V |
Maximum Drain Source Voltage (V) | 600 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 30000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Part Status | Active |
PCB changed | 2 |
PPAP | No |
Process Technology | SuperMESH |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Supplier Temperature Grade | Industrial |
Tab | Tab |
Typical Fall Time (ns) | 25 |
Typical Gate Charge @ 10V (nC) | 7 |
Typical Gate Charge @ Vgs (nC) | 7@10V |
Typical Input Capacitance @ Vds (pF) | 156@25V |
Typical Rise Time (ns) | 5 |
Typical Turn-Off Delay Time (ns) | 19 |
Typical Turn-On Delay Time (ns) | 6.5 |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 25 ns |
Forward Transconductance - Min: | 1 S |
Id - Continuous Drain Current: | 1 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | DPAK-3(TO-252-3) |
Pd - Power Dissipation: | 30 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 7 nC |
Rds On - Drain-Source Resistance: | 8.5 Ohms |
Rise Time: | 5 ns |
Series: | STD1NK60T4 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | SuperMESH |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel MOSFET |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 19 ns |
Typical Turn-On Delay Time: | 6.5 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 2.25 V |
Вес, г | 0.6 |
Техническая документация
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Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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