STD3NK100Z
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см. техническую документацию
см. техническую документацию
1 шт. со склада г.Москва, срок 10-11 дней
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Альтернативные предложения2
Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, 1KВ 2.5A DPAK Характеристики Категория | Транзистор |
Тип | БТИЗ |
Вид | IGBT |
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 2500 |
Fall Time | 32 ns |
Height | 2.4 mm |
Id - Continuous Drain Current | 2.5 A |
Length | 6.6 mm |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TO-252-3 |
Packaging | Reel |
Pd - Power Dissipation | 90 W |
Product Category | MOSFET |
Qg - Gate Charge | 18 nC |
Rds On - Drain-Source Resistance | 6 Ohms |
Rise Time | 7.5 ns |
RoHS | Details |
Series | N-channel MDmesh |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 39 ns |
Typical Turn-On Delay Time | 15 ns |
Vds - Drain-Source Breakdown Voltage | 1000 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 6.2 mm |
Automotive | No |
Channel Type | N |
ECCN (US) | EAR99 |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 2.5 |
Maximum Diode Forward Voltage (V) | 1.6 |
Maximum Drain Source Resistance (mOhm) | 6000@10V |
Maximum Drain Source Voltage (V) | 1000 |
Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Gate Threshold Voltage (V) | 4.5 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 30 |
Maximum Power Dissipation (mW) | 90000 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 10 |
Minimum Gate Threshold Voltage (V) | 3 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Operating Junction Temperature (°C) | -55 to 150 |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Process Technology | SuperMESH |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Supplier Temperature Grade | Industrial |
Tab | Tab |
Typical Drain Source Resistance @ 25°C (mOhm) | 5400@10V |
Typical Fall Time (ns) | 32 |
Typical Gate Charge @ 10V (nC) | 18 |
Typical Gate Charge @ Vgs (nC) | 18@10V |
Typical Gate Plateau Voltage (V) | 6 |
Typical Gate Threshold Voltage (V) | 3.75 |
Typical Gate to Drain Charge (nC) | 9.2 |
Typical Gate to Source Charge (nC) | 3.6 |
Typical Input Capacitance @ Vds (pF) | 601@25V |
Typical Output Capacitance (pF) | 53 |
Typical Reverse Recovery Charge (nC) | 2500 |
Typical Reverse Recovery Time (ns) | 628 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 12@25V |
Typical Rise Time (ns) | 7.5 |
Typical Turn-Off Delay Time (ns) | 39 |
Typical Turn-On Delay Time (ns) | 15 |
Вес, г | 0.42 |
Техническая документация
Datasheet
pdf, 874 КБ
Datasheet STD3NK100Z
pdf, 417 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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