STN1NK80Z
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25 шт. со склада г.Москва, срок 8-9 дней
160 руб.
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от 5 шт. —
110 руб.
от 10 шт. —
82 руб.
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на сумму 320 руб.
Альтернативные предложения4
Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, 800В, 160мА, 2,5Вт, SOT223
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 4000 |
Fall Time | 55 ns |
Forward Transconductance - Min | 0.8 S |
Height | 1.8 mm |
Id - Continuous Drain Current | 250 mA |
Length | 6.5 mm |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-223-3 |
Packaging | Reel |
Pd - Power Dissipation | 2.5 W |
Product Category | MOSFET |
Qg - Gate Charge | 7.7 nC |
Rds On - Drain-Source Resistance | 16 Ohms |
Rise Time | 30 ns |
RoHS | Details |
Series | N-channel MDmesh |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | Power Mosfet |
Typical Turn-Off Delay Time | 22 ns |
Typical Turn-On Delay Time | 8 ns |
Vds - Drain-Source Breakdown Voltage | 800 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 3.5 mm |
Channel Type | N |
Maximum Continuous Drain Current | 250 mA |
Maximum Drain Source Resistance | 16 Ω |
Maximum Drain Source Voltage | 800 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 4.5V |
Maximum Power Dissipation | 2.5 W |
Minimum Gate Threshold Voltage | 3V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-223 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 7.7 nC @ 10 V |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 4000 |
Fall Time: | 55 ns |
Forward Transconductance - Min: | 0.8 S |
Id - Continuous Drain Current: | 250 mA |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-223-4 |
Pd - Power Dissipation: | 2.5 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 7.7 nC |
Rds On - Drain-Source Resistance: | 16 Ohms |
Rise Time: | 30 ns |
Series: | STN1NK80Z |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel MOSFET |
Type: | Power MOSFET |
Typical Turn-Off Delay Time: | 22 ns |
Typical Turn-On Delay Time: | 8 ns |
Vds - Drain-Source Breakdown Voltage: | 800 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Automotive | No |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 0.25 |
Maximum Diode Forward Voltage (V) | 1.6 |
Maximum Drain Source Resistance (mOhm) | 16000@10V |
Maximum Drain Source Voltage (V) | 800 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Gate Threshold Voltage (V) | 4.5 |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 30 |
Maximum Power Dissipation (mW) | 2500 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Operating Junction Temperature (°C) | -55 to 150 |
Part Status | Active |
PCB changed | 3 |
PPAP | No |
Process Technology | SuperMESH |
Standard Package Name | SOT |
Supplier Package | SOT-223 |
Tab | Tab |
Typical Fall Time (ns) | 55 |
Typical Gate Charge @ 10V (nC) | 7.7 |
Typical Gate Charge @ Vgs (nC) | 7.7@10V |
Typical Input Capacitance @ Vds (pF) | 160@25V |
Typical Rise Time (ns) | 30 |
Typical Turn-Off Delay Time (ns) | 22 |
Typical Turn-On Delay Time (ns) | 8 |
Вес, г | 0.85 |
Техническая документация
Datasheet
pdf, 601 КБ
Datasheet
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Datasheet
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Datasheet
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Datasheet
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Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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