STP11NM60ND

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см. техническую документацию

57 шт. со склада г.Москва, срок 8-9 дней

1 240 руб.

от 2 шт. — 1 110 руб.

от 5 шт. — 1 020 руб.

от 10 шт. — 965 руб.

Добавить в корзину 1 шт. на сумму 1 240 руб.

Альтернативные предложения4

Номенклатурный номер: 8002007478

Электроэлемент

Описание Транзистор N-МОП, полевой, 600В, 6,3А, 90Вт, TO220-3 Характеристики

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current - (A)	10
Maximum Drain Source Resistance - (mOhm)	450@10V
Maximum Drain Source Voltage - (V)	600
Maximum Gate Source Voltage - (V)	??25
Maximum Gate Threshold Voltage - (V)	5
Maximum Power Dissipation - (mW)	90000
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Tube
Pin Count	3
Process Technology	FDmesh II
Standard Package Name	TO-220
Supplier Package	TO-220
Typical Gate Charge @ 10V - (nC)	30
Typical Gate Charge @ Vgs - (nC)	30@10V
Typical Input Capacitance @ Vds - (pF)	850@50V
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	10
Maximum Diode Forward Voltage (V)	1.3
Maximum Drain Source Resistance (mOhm)	450@10V
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	±25
Maximum Gate Threshold Voltage (V)	5
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	25
Maximum Power Dissipation (mW)	90000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Operating Junction Temperature (°C)	150
Part Status	Active
PCB changed	3
PPAP	No
Product Category	Power MOSFET
Tab	Tab
Typical Fall Time (ns)	9
Typical Gate Charge @ 10V (nC)	30
Typical Gate Charge @ Vgs (nC)	30@10V
Typical Input Capacitance @ Vds (pF)	850@50V
Typical Rise Time (ns)	7
Typical Turn-Off Delay Time (ns)	50
Typical Turn-On Delay Time (ns)	16
Вес, г	2.5