AUIRF7669L2TR, Trans MOSFET N-CH Si 100V 19A Automotive AEC-Q101 15-Pin Direct-FET L8 T/R
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Описание
Diodes, Transistors and Thyristors\FET Transistors\MOSFETs
Trans MOSFET N-CH Si 100V 19A Automotive 15-Pin Direct-FET L8 T/R
Технические параметры
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Octal Source Dual Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | No Lead |
| Material | Si |
| Maximum Continuous Drain Current (A) | 19 |
| Maximum Drain Source Resistance (mOhm) | 4.4@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum IDSS (uA) | 5 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 3300 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 15 |
| Pin Count | 15 |
| PPAP | Unknown |
| Process Technology | DirectFET |
| Product Category | Power MOSFET |
| Supplier Package | Direct-FET L8 |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 14 |
| Typical Gate Charge @ 10V (nC) | 81 |
| Typical Gate Charge @ Vgs (nC) | 81@10V |
| Typical Input Capacitance @ Vds (pF) | 5660@25V |
| Typical Rise Time (ns) | 30 |
| Typical Turn-Off Delay Time (ns) | 27 |
| Typical Turn-On Delay Time (ns) | 15 |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Fall Time: | 14 ns |
| Forward Transconductance - Min: | 90 S |
| Id - Continuous Drain Current: | 114 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DirectFET-L8 |
| Pd - Power Dissipation: | 100 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 120 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 3.5 mOhms |
| Rise Time: | 30 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 27 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
Техническая документация
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем
