NCD5701BDR2G, Driver 5V 7.8A 1-OUT High Side/Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC N T/R

NCD5701BDR2G, Driver 5V 7.8A 1-OUT High Side/Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC N T/R
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см. техническую документацию
120 руб.
Мин. кол-во для заказа 280 шт.
Добавить в корзину 280 шт. на сумму 33 600 руб.
Номенклатурный номер: 8002272440
Артикул: NCD5701BDR2G

Описание

Solutions for Energy Infrastructure

onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

Технические параметры

Brand: onsemi
Factory Pack Quantity: Factory Pack Quantity: 2500
Fall Time: 19 ns
Manufacturer: onsemi
Maximum Operating Temperature: +125 C
Maximum Turn-Off Delay Time: 75 ns
Maximum Turn-On Delay Time: 75 ns
Minimum Operating Temperature: -40 C
Mounting Style: SMD/SMT
Number of Drivers: 1 Driver
Number of Outputs: 1 Output
Operating Supply Current: 10 uA
Output Current: 4 A
Output Voltage: 800 mV, 14.1 V
Package/Case: SOIC-8
Pd - Power Dissipation: 700 mW
Product Category: Gate Drivers
Product Type: Gate Drivers
Product: IGBT, MOSFET Gate Drivers
Rise Time: 18 ns
Series: NCD5701
Shutdown: Shutdown
Subcategory: PMIC-Power Management ICs
Supply Voltage - Max: 30 V
Supply Voltage - Min: 20 V
Technology: Si
Type: Half-Bridge

Техническая документация

Datasheet NCD5701BDR2G
pdf, 342 КБ

Дополнительная информация

Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем