FDB070AN06A0, Транзистор: N-MOSFET, полевой, 60В, 80А, 175Вт, D2PAK

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870 руб.

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Номенклатурный номер: 8002521308

Артикул: FDB070AN06A0

Semiconductors\Transistors\Unipolar transistors\N channel transistors

Описание Транзистор: N-MOSFET, полевой, 60В, 80А, 175Вт, D2PAK Характеристики

Case	D2PAK
Drain current	80A
Drain-source voltage	60V
Gate charge	66nC
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	ONSEMI
Mounting	SMD
On-state resistance	15mΩ
Polarisation	unipolar
Power dissipation	175W
Technology	PowerTrench®
Type of transistor	N-MOSFET
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	800
Fall Time:	35 ns
Id - Continuous Drain Current:	80 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	D2PAK-3(TO-263-3)
Part # Aliases:	FDB070AN06A0_NL
Pd - Power Dissipation:	175 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	66 nC
Rds On - Drain-Source Resistance:	6.1 mOhms
REACH - SVHC:	Details
Rise Time:	159 ns
Series:	FDB070AN06A0
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	12 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Вес, г	1.65