FDB44N25TM, Транзистор N-MOSFET, полевой, 250В, 26,4А, 307Вт, D2PAK, UniFET™
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680 руб.
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Описание
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength.
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 800 |
| Fall Time | 115 ns |
| Forward Transconductance - Min | 32 S |
| Height | 4.83 mm |
| Id - Continuous Drain Current | 44 A |
| Length | 10.67 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 307 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 69 mOhms |
| Rise Time | 400 ns |
| RoHS | Details |
| Series | FDB44N25 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 85 ns |
| Typical Turn-On Delay Time | 55 ns |
| Unit Weight | 0.046296 oz |
| Vds - Drain-Source Breakdown Voltage | 250 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 9.65 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 44 A |
| Maximum Drain Source Resistance | 69 mΩ |
| Maximum Drain Source Voltage | 250 V |
| Maximum Power Dissipation | 307 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 47 nC @ 10 V |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Fall Time: | 115 ns |
| Forward Transconductance - Min: | 32 S |
| Id - Continuous Drain Current: | 44 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 307 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 61 nC |
| Rds On - Drain-Source Resistance: | 69 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 400 ns |
| Series: | FDB44N25 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 85 ns |
| Typical Turn-On Delay Time: | 55 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 2.08 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
