FDP150N10

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1 230 руб.

от 2 шт. — 1 090 руб.

от 5 шт. — 999 руб.

от 10 шт. — 953.75 руб.

Добавить в корзину 1 шт. на сумму 1 230 руб.

Номенклатурный номер: 8002983425

Электроэлемент

Описание Н-Ч 100В 57А 110Вт 0,015Р ТО219

Channel Mode	Enhancement
Continuous Drain Current	57(A)
Drain-Source On-Volt	100(V)
Gate-Source Voltage (Max)	'±20(V)
Mounting	Through Hole
Number of Elements	1
Operating Temp Range	-55C to 150C
Operating Temperature Classification	Military
Package Type	TO-220
Packaging	Rail/Tube
Pin Count	3+Tab
Polarity	N
Power Dissipation	110(W)
Rad Hardened	No
Type	Power MOSFET
Automotive	No
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	57
Maximum Drain Source Resistance (mOhm)	15@10V
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4.5
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	110000
Minimum Operating Temperature (°C)	-55
Number of Elements per Chip	1
Part Status	Active
PCB changed	3
PPAP	No
Process Technology	TMOS
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-220
Tab	Tab
Typical Fall Time (ns)	83
Typical Gate Charge @ 10V (nC)	53
Typical Gate Charge @ Vgs (nC)	53@10V
Typical Input Capacitance @ Vds (pF)	3580@25V
Typical Rise Time (ns)	164
Typical Turn-Off Delay Time (ns)	86
Typical Turn-On Delay Time (ns)	47
Вес, г	2.03