FDP20N50
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1 310 руб.
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1 180 руб.
от 4 шт. —
1 100 руб.
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Описание
Электроэлемент
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:250W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Id Max:20A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:80A; Repetitive Avalanche Energy Max:25mJ; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Технические параметры
Brand | ON Semiconductor/Fairchild |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 50 |
Fall Time | 105 ns |
Forward Transconductance - Min | 24.6 S |
Height | 16.3 mm |
Id - Continuous Drain Current | 20 A |
Length | 10.67 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-220-3 |
Packaging | Tube |
Pd - Power Dissipation | 250 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 230 mOhms |
Rise Time | 375 ns |
RoHS | Details |
Series | FDP20N50 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 100 ns |
Typical Turn-On Delay Time | 95 ns |
Unit Weight | 0.063493 oz |
Vds - Drain-Source Breakdown Voltage | 500 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 4.7 mm |
Automotive | No |
Channel Type | N |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Through Hole |
Maximum Continuous Drain Current (A) | 20 |
Maximum Drain Source Resistance (mOhm) | 230@10V |
Maximum Drain Source Voltage (V) | 500 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Gate Threshold Voltage (V) | 5 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 250000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Through Hole |
Number of Elements per Chip | 1 |
Part Status | Obsolete |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Process Technology | UniFET |
Standard Package Name | TO |
Supplier Package | TO-220 |
Tab | Tab |
Typical Fall Time (ns) | 105 |
Typical Gate Charge @ 10V (nC) | 45.6 |
Typical Gate Charge @ Vgs (nC) | 45.6@10V |
Typical Input Capacitance @ Vds (pF) | 2400@25V |
Typical Rise Time (ns) | 375 |
Typical Turn-Off Delay Time (ns) | 100 |
Typical Turn-On Delay Time (ns) | 95 |
Case | TO220AB |
Drain current | 12.9A |
Drain-source voltage | 500V |
Gate charge | 65nC |
Gate-source voltage | ±30V |
Kind of channel | enhanced |
Kind of package | tube |
On-state resistance | 0.26Ω |
Polarisation | unipolar |
Power dissipation | 250W |
Type of transistor | N-MOSFET |
Вес, г | 2.7 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов