FDD5680

Изображения служат только для ознакомления,
см. техническую документацию

500 руб.

от 2 шт. — 400 руб.

от 4 шт. — 333 руб.

Добавить в корзину 1 шт. на сумму 500 руб.

Номенклатурный номер: 8002989827

Электроэлемент

Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD5680)

Current - Continuous Drain (Id) @ 25В°C	8.5A(Ta)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1835pF @ 30V
Manufacturer	ON Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-252-3, DPak(2 Leads+Tab), SC-63
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	2.8W(Ta), 60W(Tc)
Rds On (Max) @ Id, Vgs	21mOhm @ 8.5A, 10V
Series	PowerTrenchВ®
Supplier Device Package	TO-252
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	16 ns
Forward Transconductance - Min:	30 S
Id - Continuous Drain Current:	38 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	DPAK-3
Part # Aliases:	FDD5680_NL
Pd - Power Dissipation:	60 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	46 nC
Rds On - Drain-Source Resistance:	17 mOhms
Rise Time:	9 ns
Series:	FDD5680
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	15 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Вес, г	0.26