STP8NK100Z
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Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 1000В, 4,3А, 160Вт, TO220-3 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 1000 |
Fall Time | 30 ns |
Forward Transconductance - Min | 7 S |
Height | 9.15 mm |
Id - Continuous Drain Current | 6.5 A |
Length | 10.4 mm |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-220-3 |
Packaging | Tube |
Pd - Power Dissipation | 160 W |
Product Category | MOSFET |
Qg - Gate Charge | 73 nC |
Rds On - Drain-Source Resistance | 1.6 Ohms |
Rise Time | 19 ns |
RoHS | Details |
Series | N-channel MDmesh |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 59 ns |
Typical Turn-On Delay Time | 28 ns |
Vds - Drain-Source Breakdown Voltage | 1000 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 4.6 mm |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 30 ns |
Forward Transconductance - Min: | 7 S |
Id - Continuous Drain Current: | 6.5 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 160 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 73 nC |
Rds On - Drain-Source Resistance: | 1.85 Ohms |
Rise Time: | 19 ns |
Series: | STP8NK100Z |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | SuperMESH |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel MOSFET |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 59 ns |
Typical Turn-On Delay Time: | 28 ns |
Vds - Drain-Source Breakdown Voltage: | 1 kV |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Automotive | No |
Channel Type | N |
ECCN (US) | EAR99 |
Lead Shape | Through Hole |
Maximum Continuous Drain Current (A) | 6.5 |
Maximum Drain Source Resistance (mOhm) | 1850@10V |
Maximum Drain Source Voltage (V) | 1000 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 160000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Through Hole |
Number of Elements per Chip | 1 |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Process Technology | SuperMESH |
Standard Package Name | TO-220 |
Supplier Package | TO-220AB |
Supplier Temperature Grade | Industrial |
Tab | Tab |
Typical Fall Time (ns) | 30 |
Typical Gate Charge @ 10V (nC) | 73 |
Typical Gate Charge @ Vgs (nC) | 73@10V |
Typical Input Capacitance @ Vds (pF) | 2180@25V |
Typical Rise Time (ns) | 19 |
Typical Turn-Off Delay Time (ns) | 59 |
Typical Turn-On Delay Time (ns) | 28 |
Вес, г | 8.165 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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