FDD390N15A
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700 руб.
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590 руб.
от 4 шт. —
527 руб.
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Описание
Электроэлемент
MOSFET, N-CH, 150V, 26A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0335ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 26(A) |
| Drain-Source On-Volt | 150(V) |
| Gate-Source Voltage (Max) | '±20(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | DPAK |
| Packaging | Tape and Reel |
| Pin Count | 2+Tab |
| Polarity | N |
| Power Dissipation | 63(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Id - Continuous Drain Current: | 26 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DPAK-3 |
| Pd - Power Dissipation: | 63 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 18.6 nC |
| Rds On - Drain-Source Resistance: | 33.5 mOhms |
| Series: | FDD390N15A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 26 A |
| Maximum Drain Source Resistance | 40 mΩ |
| Maximum Drain Source Voltage | 150 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 63 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 14.3 nC @ 10 V |
| Width | 6.22mm |
| Вес, г | 0.4 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
