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STB33N60M2, MOSFET N-channel 600 V, 0.108 Ohm typ 26 A MDmesh M2 Power MOSFETs in D2PAK package

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Альтернативные предложения1

Номенклатурный номер: 8004583728

Артикул: STB33N60M2

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Latest Technologies in Power MOSFET and IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETS and IGBTs tailored to your specific application targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs and trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's latest 1200V SiC MOSFETs combine the industry's highest junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. For motor control, M series IGBTs offer an optimized tradeoff of VCE(SAT) and E(off) along with a rugged short circuit rating. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	9 ns
Id - Continuous Drain Current:	26 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	TO-263-3
Pd - Power Dissipation:	190 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	45.5 nC
Rds On - Drain-Source Resistance:	125 mOhms
Rise Time:	9.6 ns
Series:	STB33N60M2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	109 ns
Typical Turn-On Delay Time:	16 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current - (A)	26
Maximum Drain Source Resistance - (mOhm)	125@10V
Maximum Drain Source Voltage - (V)	650
Maximum Gate Source Voltage - (V)	??25
Maximum Gate Threshold Voltage - (V)	4
Maximum Power Dissipation - (mW)	190000
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Tape and Reel
Pin Count	3
Process Technology	MDmesh II
Standard Package Name	TO-263
Supplier Package	D2PAK
Typical Gate Charge @ 10V - (nC)	45.5
Typical Gate Charge @ Vgs - (nC)	45.5@10V
Typical Input Capacitance @ Vds - (pF)	1781@100V
Вес, г	2