NCD5701BDR2G, Gate Drivers HIGH CURRENT IGBT GATE DRIVER
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Power Management ICs\Gate Drivers
Solutions for Energy Infrastructureonsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
Технические параметры
| Brand: | onsemi |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 19 ns |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +125 C |
| Maximum Turn-Off Delay Time: | 75 ns |
| Maximum Turn-On Delay Time: | 75 ns |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | SMD/SMT |
| Number of Drivers: | 1 Driver |
| Number of Outputs: | 1 Output |
| Operating Supply Current: | 10 uA |
| Output Current: | 4 A |
| Output Voltage: | 800 mV, 14.1 V |
| Package/Case: | SOIC-8 |
| Pd - Power Dissipation: | 700 mW |
| Product Category: | Gate Drivers |
| Product Type: | Gate Drivers |
| Product: | IGBT, MOSFET Gate Drivers |
| Rise Time: | 18 ns |
| Series: | NCD5701 |
| Shutdown: | Shutdown |
| Subcategory: | PMIC-Power Management ICs |
| Supply Voltage - Max: | 30 V |
| Supply Voltage - Min: | 20 V |
| Technology: | Si |
| Type: | Half-Bridge |
Техническая документация
Datasheet NCD5701BDR2G
pdf, 342 КБ
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем
