TBD62786AFNG,EL, Gate Drivers DMOS Transistor Array 8-CH 50V -0.5A
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Описание
Semiconductors\Power Management ICs\Gate Drivers
TBD62x DMOS FET Transistor ArraysToshiba TBD62x DMOS FET Transistor Arrays are equipped with 7-channel and 8-channel common source power DMOS arrays. The Doubled-Diffused MOSFET (DMOS FET) type sink-output driver allows high voltage and consumes less power due to reduced on-resistance of the output stage. These TBD62x transistor arrays feature 50V high output voltage, -0.5A high output current, and high efficiency. The transistor arrays operate from a -40°C to +85°C temperature range and support a -55°C to +150°C storage temperature range. These TBD62x transistor arrays are available in through-hole and surface-mount packages.
Технические параметры
| Brand: | Toshiba |
| Configuration: | Inverting |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Logic Type: | CMOS |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +85 C |
| Maximum Turn-Off Delay Time: | 2 us |
| Maximum Turn-On Delay Time: | 0.2 us |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | SMD/SMT |
| Number of Drivers: | 8 Driver |
| Number of Outputs: | 8 Output |
| Operating Supply Current: | 5 mA |
| Output Current: | 500 mA |
| Output Voltage: | 50 V |
| Package / Case: | SSOP-18 |
| Pd - Power Dissipation: | 960 mW |
| Product Category: | Gate Drivers |
| Product Type: | Gate Drivers |
| Product: | Driver ICs-Various |
| Rds On - Drain-Source Resistance: | 3.25 Ohms |
| Shutdown: | No Shutdown |
| Subcategory: | PMIC-Power Management ICs |
| Supply Voltage - Max: | 50 V |
| Supply Voltage - Min: | 2 V |
| Technology: | Si |
| Type: | Low-Side |
| Вес, г | 0.09 |
Техническая документация
Datasheet TBD62786AFNG.EL
pdf, 321 КБ
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем
Сроки доставки
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