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STB28N60M2, MOSFET N-channel 600 V, 0.135 Ohm typ 22 A MDmesh M2 Power MOSFETs in D2PAK package

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900 шт., срок 7-9 недель

840 руб.

от 10 шт. — 670 руб.

от 25 шт. — 614 руб.

от 100 шт. — 477.64 руб.

Добавить в корзину 1 шт. на сумму 840 руб.

Альтернативные предложения1

Номенклатурный номер: 8004827802

Артикул: STB28N60M2

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best R DS(on) *Q g in the industry.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	8 ns
Id - Continuous Drain Current:	22 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	D2PAK-3(TO-263-3)
Pd - Power Dissipation:	170 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	36 nC
Rds On - Drain-Source Resistance:	150 mOhms
Rise Time:	7.2 ns
Series:	STB28N60M2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	100 ns
Typical Turn-On Delay Time:	14.5 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	4