STB36N60M6, MOSFET N-channel 600 V, 85 mOhm typ 30 A MDmesh M6 Power MOSFET

STB36N60M6, MOSFET N-channel 600 V, 85 mOhm typ 30 A MDmesh M6 Power MOSFET
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см. техническую документацию
545 шт., срок 7-9 недель
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от 25 шт.1 060 руб.
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Альтернативные предложения1
Номенклатурный номер: 8004827819
Артикул: STB36N60M6
Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
MDmesh™ M6 MOSFETs STMicroelectronics MDmesh™ M6 MOSFETs combine a low gate charge (Qg) with an optimized capacitance profile to target high efficiency on new topologies in power conversion applications. The super-junction MDmesh M6 series offers extremely high-efficiency performance resulting in increased power density and a low gate charge for high frequencies. STMicroelectronics M6 series MOSFETs have a breakdown voltage ranging from 600 to 700V. The MOSFETs are available in a wide range of packaging options, including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. The devices include a wide range of operating voltages for industrial applications, including chargers, adapters, silver box modules, LED lighting, telecom, server, and solar.

Технические параметры

Brand: STMicroelectronics
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 1000
Fall Time: 7.3 ns
Id - Continuous Drain Current: 30 A
Manufacturer: STMicroelectronics
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: D2PAK-3(TO-263-3)
Pd - Power Dissipation: 208 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 44.3 nC
Rds On - Drain-Source Resistance: 85 mOhms
Rise Time: 5.3 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 50.2 ns
Typical Turn-On Delay Time: 15.2 ns
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Voltage: -25 V, +25 V
Vgs th - Gate-Source Threshold Voltage: 3.25 V
Вес, г 2

Техническая документация

Datasheet
pdf, 799 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов

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