STD10NM60ND, MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
3701 шт., срок 7-9 недель
410 руб.
от 10 шт. —
320 руб.
от 100 шт. —
259 руб.
от 250 шт. —
238.99 руб.
Добавить в корзину 1 шт.
на сумму 410 руб.
Альтернативные предложения2
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Standard ProductsSTMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.
Технические параметры
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Id - Continuous Drain Current: | 8 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-252-3 |
Pd - Power Dissipation: | 70 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 19 nC |
Rds On - Drain-Source Resistance: | 600 mOhms |
Series: | STD10NM60ND |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Current - Continuous Drain (Id) @ 25В°C | 8A(Tc) |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 577pF @ 50V |
Manufacturer | STMicroelectronics |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
Packaging | Digi-ReelВ® |
Part Status | Active |
Power Dissipation (Max) | 70W(Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 4A, 10V |
Series | FDmeshв(ў II |
Standard Package | 1 |
Supplier Device Package | DPAK |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±25V |
Vgs(th) (Max) @ Id | 5V @ 250ВµA |
Вес, г | 0.33 |
Техническая документация
Datasheet STD10NM60ND
pdf, 1222 КБ
Datasheet STD10NM60ND
pdf, 1206 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.