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STD12N65M2, MOSFET N-channel 650 V, 0.42 Ohm typ 8 A MDmesh M2 Power MOSFET

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2153 шт., срок 7-9 недель

480 руб.

от 10 шт. — 380 руб.

от 100 шт. — 274 руб.

от 500 шт. — 216.91 руб.

Добавить в корзину 1 шт. на сумму 480 руб.

Альтернативные предложения2

Номенклатурный номер: 8004827914

Артикул: STD12N65M2

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	13.5 ns
Id - Continuous Drain Current:	8 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	85 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	16.5 nC
Rds On - Drain-Source Resistance:	420 mOhms
Rise Time:	7 ns
Series:	STD12N65M2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	9 ns
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	1 N-Channel
Factory Pack Quantity	2500
Fall Time	13.5 ns
Id - Continuous Drain Current	8 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-252-3
Packaging	Reel
Pd - Power Dissipation	85 W
Product Category	MOSFET
Qg - Gate Charge	16.5 nC
Rds On - Drain-Source Resistance	420 mOhms
Rise Time	7 ns
RoHS	Details
Series	MDmesh M2
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	34 ns
Typical Turn-On Delay Time	9 ns
Vds - Drain-Source Breakdown Voltage	650 V
Vgs - Gate-Source Voltage	25 V
Vgs th - Gate-Source Threshold Voltage	2 V
Channel Type	N Channel
Drain Source On State Resistance	0.42Ом
Power Dissipation	85Вт
Количество Выводов	3вывод(-ов)
Линейка Продукции	MDmesh M2
Максимальная Рабочая Температура	150°C
Монтаж транзистора	Surface Mount
Напряжение Измерения Rds(on)	10В
Напряжение Истока-стока Vds	650В
Непрерывный Ток Стока	8А
Полярность Транзистора	N Канал
Пороговое Напряжение Vgs	3В
Рассеиваемая Мощность	85Вт
Сопротивление во Включенном Состоянии Rds(on)	0.42Ом
Стиль Корпуса Транзистора	TO-252(DPAK)
Уровень Чувствительности к Влажности (MSL)	MSL 1-Безлимитный
Continuous Drain Current (Id)	8A
Drain Source On Resistance (RDS(on)@Vgs,Id)	420mΩ@10V, 4A
Drain Source Voltage (Vdss)	650V
Gate Threshold Voltage (Vgs(th)@Id)	4V@250uA
Input Capacitance (Ciss@Vds)	535pF@100V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	85W
Reverse Transfer Capacitance (Crss@Vds)	1.1pF@100V
Total Gate Charge (Qg@Vgs)	16.5nC@10V
Type	N Channel
Вес, г	0.33