STD16N50M2, MOSFET N-channel 500 V, 0.24 Ohm typ 13 A MDmesh M2 Power MOSFET
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
2439 шт., срок 6-8 недель
500 руб.
от 10 шт. —
390 руб.
от 100 шт. —
294 руб.
от 500 шт. —
231.38 руб.
Добавить в корзину 1 шт.
на сумму 500 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
MDmesh™ II Power MOSFETsSTMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 10 ns |
| Id - Continuous Drain Current: | 13 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DPAK-3(TO-252-3) |
| Pd - Power Dissipation: | 110 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 19.5 nC |
| Rds On - Drain-Source Resistance: | 240 mOhms |
| Rise Time: | 7.6 ns |
| Series: | STD16N50M2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 32 ns |
| Typical Turn-On Delay Time: | 9.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 550 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 13 |
| Maximum Drain Source Resistance (mOhm) | 280@10V |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 110000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | MDmesh M2 |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 10 |
| Typical Gate Charge @ 10V (nC) | 19.5 |
| Typical Gate Charge @ Vgs (nC) | 19.5@10V |
| Typical Input Capacitance @ Vds (pF) | 710@100V |
| Typical Rise Time (ns) | 7.6 |
| Typical Turn-Off Delay Time (ns) | 32 |
| Typical Turn-On Delay Time (ns) | 9.6 |
| Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
