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STD45N10F7, MOSFET Nchanl 100V 0013 Ohm typ 45 A Pwr MOSFET

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3704 шт., срок 6-8 недель

440 руб.

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от 100 шт. — 252 руб.

от 500 шт. — 199.09 руб.

Добавить в корзину 1 шт. на сумму 440 руб.

Альтернативные предложения1

Номенклатурный номер: 8004827972

Артикул: STD45N10F7

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

STripFET™ F7 Power MOSFETs

STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. STMicroelectronics STripFET F7 feature high avalanche ruggedness.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	8 ns
Id - Continuous Drain Current:	45 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	60 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	25 nC
Rds On - Drain-Source Resistance:	18 mOhms
Rise Time:	17 ns
Series:	STD45N10F7
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	15 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Вес, г	0.33