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STD4LN80K5, MOSFET N-channel 800 V, 2.1 Ohm typ 3 A MDmesh K5 Power MOSFET

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2203 шт., срок 6-8 недель

340 руб.

от 10 шт. — 280 руб.

от 100 шт. — 217 руб.

от 500 шт. — 185.95 руб.

Добавить в корзину 1 шт. на сумму 340 руб.

Альтернативные предложения1

Номенклатурный номер: 8004827975

Артикул: STD4LN80K5

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

MDmesh K5 Power MOSFETs
STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	25 ns
Id - Continuous Drain Current:	3 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	60 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	3.7 nC
Rds On - Drain-Source Resistance:	2.1 Ohms
Rise Time:	9 ns
Series:	STD4LN80K5
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	7 ns
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.33