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FCP400N80Z, MOSFET SuperFET2 800V 400mohm

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1 020 руб.

от 10 шт. — 810 руб.

от 50 шт. — 716 руб.

от 100 шт. — 574.38 руб.

Добавить в корзину 1 шт. на сумму 1 020 руб.

Номенклатурный номер: 8004833320

Артикул: FCP400N80Z

Бренд: ON Semiconductor***

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

SuperFET® II Power MOSFETs

onsemi SuperFET® II Power MOSFETs are a high voltage MOSFET family utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SuperFET II MOSFETs are suitable for various AC-DC power conversion in switching mode operation for system miniaturization and high efficiency.

Технические параметры

Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	50
Fall Time:	2.6 ns
Forward Transconductance - Min:	12 S
Id - Continuous Drain Current:	14 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	195 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	43 nC
Rds On - Drain-Source Resistance:	400 mOhms
Rise Time:	12 ns
Series:	FCP400N80Z
Subcategory:	MOSFETs
Technology:	Si
Tradename:	SuperFET II
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	51 ns
Typical Turn-On Delay Time:	20 ns
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Вес, кг	63.1