Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › ON Semiconductor › FCPF11N60, MOSFET 600V 11A N-CH

FCPF11N60, MOSFET 600V 11A N-CH

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840 руб.

от 10 шт. — 760 руб.

от 50 шт. — 617 руб.

от 100 шт. — 489.20 руб.

Добавить в корзину 1 шт. на сумму 840 руб.

Номенклатурный номер: 8004833327

Артикул: FCPF11N60

Бренд: ON Semiconductor***

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор: N-MOSFET, полевой, 650В, 11А, 36Вт, TO220FP Характеристики

Категория	Транзистор
Тип	полевой
Вид	MOSFET

Технические параметры

Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	50
Fall Time:	56 ns
Forward Transconductance - Min:	9.7 S
Id - Continuous Drain Current:	11 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	36 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	40 nC
Rds On - Drain-Source Resistance:	380 mOhms
Rise Time:	98 ns
Series:	FCPF11N60
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	119 ns
Typical Turn-On Delay Time:	34 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	50
Fall Time	56 ns
Forward Transconductance - Min	9.7 S
Height	16.3 mm
Id - Continuous Drain Current	11 A
Length	10.67 mm
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	36 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	380 mOhms
Rise Time	98 ns
RoHS	Details
Series	FCPF11N60
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	119 ns
Typical Turn-On Delay Time	34 ns
Unit Weight	0.080072 oz
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	30 V
Width	4.7 mm
Case	TO220FP
Drain current	11A
Drain-source voltage	650V
Gate charge	52nC
Gate-source voltage	±30V
Kind of channel	enhanced
Kind of package	tube
Mounting	THT
On-state resistance	0.38Ω
Polarisation	unipolar
Power dissipation	36W
Type of transistor	N-MOSFET
Вес, г	2.105