FCPF11N60F, MOSFET 600V NCH MOSFET

FCPF11N60F, MOSFET 600V NCH MOSFET
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740 руб.
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Номенклатурный номер: 8004833328
Артикул: FCPF11N60F

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Cloud Power Management Solutions

onsemi Cloud Power Management Solutions drive efficiency while simplifying system design, reducing board space, improving reliability and accelerating time to market. As the world demand for energy increases by 35 to 40% by 2030, onsemi powers major industrial products with cool efficiency to conserve the energy we use every day.

Технические параметры

Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 50
Fall Time: 56 ns
Forward Transconductance - Min: 9.7 S
Id - Continuous Drain Current: 11 A
Manufacturer: onsemi
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-220-3
Packaging: Tube
Pd - Power Dissipation: 125 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 52 nC
Rds On - Drain-Source Resistance: 380 mOhms
Rise Time: 98 ns
Series: FCPF11N60F
Subcategory: MOSFETs
Technology: Si
Tradename: SuperFET FRFET
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: N-Channel MOSFET
Typical Turn-Off Delay Time: 119 ns
Typical Turn-On Delay Time: 34 ns
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Voltage: -30 V, +30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Вес, г 1.95

Техническая документация

Datasheet
pdf, 482 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов