FCPF11N60F, MOSFET 600V NCH MOSFET
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см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Cloud Power Management Solutionsonsemi Cloud Power Management Solutions drive efficiency while simplifying system design, reducing board space, improving reliability and accelerating time to market. As the world demand for energy increases by 35 to 40% by 2030, onsemi powers major industrial products with cool efficiency to conserve the energy we use every day.
Технические параметры
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 56 ns |
Forward Transconductance - Min: | 9.7 S |
Id - Continuous Drain Current: | 11 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 125 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 52 nC |
Rds On - Drain-Source Resistance: | 380 mOhms |
Rise Time: | 98 ns |
Series: | FCPF11N60F |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | SuperFET FRFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | N-Channel MOSFET |
Typical Turn-Off Delay Time: | 119 ns |
Typical Turn-On Delay Time: | 34 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 1.95 |
Техническая документация
Datasheet
pdf, 482 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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