AUIRF1324WL, MOSFET AUTO 24V 1 N-CH HEXFET 1.3mOhms
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
20V to 40V N-Channel Automotive MOSFETsInfineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
Технические параметры
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 110 ns |
Forward Transconductance - Min: | 210 S |
Id - Continuous Drain Current: | 382 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-262-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 300 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 120 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 1.3 mOhms |
Rise Time: | 200 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 75 ns |
Typical Turn-On Delay Time: | 18 ns |
Vds - Drain-Source Breakdown Voltage: | 24 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Channel Type | N |
Maximum Continuous Drain Current | 382 A |
Package Type | TO-262 WideLead |
Вес, г | 2.39 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем