IRS2011STRPBF, Gate Drivers 200V high & low-side,1A,60ns,DSO-8
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Описание
Semiconductors\Power Management ICs\Gate Drivers
200V Level-Shift Gate DriversInfineon 200V Level-Shift Gate Drivers includes 3-phase, half-bridge, or high- and low-side drivers for low (24V, 36V, and 48V) and medium voltage (60V, 80V, 100V, and 120V) motor control applications. The 3-phase product utilizes Infineon"s unique Silicon-On-Insulator (SOI) level-shift technology. This feature provides functional isolation with industry-leading negative VS robustness and reduced level-shift losses. A solution is also available with integrated Bootstrap Diodes (BSD) to reduce BOM cost, simplify the layout, and reduce PCB size.
Технические параметры
| Brand: | Infineon Technologies |
| Configuration: | Inverting |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 15 ns |
| Features: | Independent |
| Logic Type: | CMOS, TTL |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +125 C |
| Maximum Turn-Off Delay Time: | 80 ns |
| Maximum Turn-On Delay Time: | 80 ns |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Drivers: | 2 Driver |
| Number of Outputs: | 2 Output |
| Off Time - Max: | 80 ns |
| Operating Supply Current: | 300 uA |
| Output Current: | 1 A |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 625 mW |
| Product Category: | Gate Drivers |
| Product Type: | Gate Drivers |
| Product: | MOSFET Gate Drivers |
| Propagation Delay - Max: | 80 ns |
| Rise Time: | 25 ns |
| Series: | IR(S)201X |
| Shutdown: | No Shutdown |
| Subcategory: | PMIC-Power Management ICs |
| Supply Voltage - Max: | 20 V |
| Supply Voltage - Min: | 10 V |
| Technology: | Si |
| Tradename: | EiceDRIVER |
| Type: | High-Side, Low-Side |
| Automotive | No |
| Driver Configuration | Non-Inverting |
| Driver Type | High and Low Side |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| High and Low Sides Dependency | Independent |
| Input Logic Compatibility | CMOS|LSTTL|3.3V(Min)|5V |
| Lead Shape | Gull-wing |
| Maximum Fall Time (ns) | 35 |
| Maximum Operating Supply Voltage (V) | 20 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Power Dissipation (mW) | 625 |
| Maximum Propagation Delay Time (ns) | 80 |
| Maximum Rise Time (ns) | 40 |
| Maximum Supply Current (mA) | 0.3 |
| Maximum Turn-Off Delay Time (ns) | 20 |
| Maximum Turn-On Delay Time (ns) | 20 |
| Minimum Operating Supply Voltage (V) | 10 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Surface Mount |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Packaging | Tube |
| Part Status | LTB |
| PCB changed | 8 |
| Peak Output Current (A) | 1(Typ) |
| Pin Count | 8 |
| PPAP | No |
| Reference Voltage (V) | 200(Max) |
| Special Features | Under Voltage Lockout |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Typical Input High Threshold Voltage (V) | 9 |
| Typical Input Low Threshold Voltage (V) | 8.2 |
| Maximum Fall Time - (ns) | 35 |
| Maximum Operating Supply Voltage - (V) | 20 |
| Maximum Power Dissipation - (mW) | 625 |
| Maximum Rise Time - (ns) | 40 |
| Military | No |
| Minimum Operating Supply Voltage - (V) | 10 |
| Operating Temperature - (??C) | -40~125 |
| Peak Output Current - (A) | 1(Typ) |
| Вес, г | 0.54 |
Техническая документация
Datasheet
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Документация
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Datasheet IRS2011PBF
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Дополнительная информация
Калькуляторы группы «Драйверы MOSFET и IGBT»
Типы корпусов импортных микросхем
