2ED2106S06FXUMA1

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630 руб.

от 2 шт. — 520 руб.

от 5 шт. — 447 руб.

от 10 шт. — 413.75 руб.

Добавить в корзину 1 шт. на сумму 630 руб.

Номенклатурный номер: 8006455628

Электроэлемент

650 V high-side and low-side gate driver with integrated bootstrap diode

Brand:	Infineon Technologies
Configuration:	Inverting
Factory Pack Quantity:	2500
Fall Time:	35 ns
Logic Type:	CMOS, LSTTL
Manufacturer:	Infineon
Maximum Operating Temperature:	+125 C
Maximum Turn-Off Delay Time:	300 ns
Maximum Turn-On Delay Time:	300 ns
Minimum Operating Temperature:	-40 C
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Operating Supply Current:	300 uA
Output Current:	290 mA
Package/Case:	DSO-8
Part # Aliases:	2ED2106S06F SP001710050
Pd - Power Dissipation:	625 mW
Product Category:	Gate Drivers
Product Type:	Gate Drivers
Product:	IGBT, MOSFET Gate Drivers
Propagation Delay - Max:	300 ns
Rise Time:	100 ns
Shutdown:	Shutdown
Subcategory:	PMIC-Power Management ICs
Supply Voltage - Max:	20 V
Supply Voltage - Min:	10 V
Technology:	Si
Type:	High-Side, Low-Side
Вес, г	0.45