STD10NF10T4

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см. техническую документацию

2 шт. со склада г.Москва, срок 9-10 дней

300 руб.

от 2 шт. — 200 руб.

Добавить в корзину 1 шт. на сумму 300 руб.

Альтернативные предложения4

Номенклатурный номер: 8007894543

Электроэлемент

Описание Транзистор N-МОП, полевой, 100В 13A 50Вт 0,13Ом TO252 Характеристики

Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	2500
Fall Time	8 ns
Forward Transconductance - Min	20 S
Height	2.4 mm
Id - Continuous Drain Current	13 A
Length	6.6 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-252-3
Packaging	Cut Tape
Pd - Power Dissipation	50 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	115 mOhms
Rise Time	25 ns
RoHS	Details
Series	STD10NF10
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	32 ns
Typical Turn-On Delay Time	16 ns
Unit Weight	0.139332 oz
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	20 V
Width	6.2 mm
кол-во в упаковке	2500
Channel Type	N
Maximum Continuous Drain Current	13 A
Maximum Drain Source Resistance	130 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	50 W
Minimum Gate Threshold Voltage	2V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	15.3 nC @ 10 V
Вес, г	0.8