STB8N65M5

Изображения служат только для ознакомления,
см. техническую документацию

1 шт. со склада г.Москва, срок 9-10 дней

280 руб.

Добавить в корзину 1 шт. на сумму 280 руб.

Альтернативные предложения3

Номенклатурный номер: 8008007799

Электроэлемент

Описание Транзистор: N-MOSFET, полевой, 650В, 4,4А, 70Вт, D2PAK Характеристики

Current - Continuous Drain (Id) @ 25В°C	7A(Tc)
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	690pF @ 100V
Manufacturer	STMicroelectronics
Mounting Type	Surface Mount
Operating Temperature	150В°C(TJ)
Package / Case	TO-263-3, DВІPak(2 Leads+Tab), TO-263AB
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	70W(Tc)
Rds On (Max) @ Id, Vgs	600 mOhm @ 3.5A, 10V
Series	MDmeshв(ў V
Supplier Device Package	D2PAK
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±25V
Vgs(th) (Max) @ Id	5V @ 250ВµA
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Id - Continuous Drain Current:	7 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-263-3
Pd - Power Dissipation:	70 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	15 nC
Rds On - Drain-Source Resistance:	560 mOhms
Series:	Mdmesh M5
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	1.625