FDMS7608S

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430 руб.

от 2 шт. — 360 руб.

от 10 шт. — 307 руб.

Добавить в корзину 1 шт. на сумму 430 руб.

Номенклатурный номер: 8008258229

Электроэлемент

Dual N-Channel MOSFET, 22 A, 30 A, 30 V, 8-Pin Power 56 ON Semiconductor FDMS7608S

Brand	ON Semiconductor/Fairchild
Configuration	Dual
Factory Pack Quantity	3000
Fall Time	10 ns
Height	0.8 mm
Id - Continuous Drain Current	12 A, 15 A
Length	6 mm
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	Power-56-8
Packaging	Cut Tape
Pd - Power Dissipation	1 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	10.3 mOhms, 6.6 mOhms
Rise Time	10 ns
RoHS	Details
Series	FDMS7608S
Technology	Si
Tradename	PowerTrench SyncFET
Transistor Polarity	N-Channel
Transistor Type	2 N-Channel
Type	MOSFET Driver
Unit Weight	0.007972 oz
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	20 V
Width	5 mm
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	10 ns
Id - Continuous Drain Current:	12 A, 15 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package/Case:	Power-56-8
Pd - Power Dissipation:	1 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	24 nC, 30 nC
Rds On - Drain-Source Resistance:	10.3 mOhms, 6.6 mOhms
Rise Time:	10 ns
Series:	FDMS7608S
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench SyncFET
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Type:	MOSFET Driver
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Вес, г	0.226