STP10NM60N, Транзистор полевой N-канальный 600В 8A
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340 шт. со склада г.Москва, срок 10-12 дней
110 руб.
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Альтернативные предложения2
Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 600В 8A
Технические параметры
| Корпус | TO-220AB | |
| Brand | STMicroelectronics | |
| Configuration | Single | |
| Factory Pack Quantity | 1000 | |
| Fall Time | 15 ns | |
| Id - Continuous Drain Current | 10 A | |
| Manufacturer | STMicroelectronics | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | Through Hole | |
| Number of Channels | 1 Channel | |
| Package / Case | TO-220-3 | |
| Packaging | Tube | |
| Pd - Power Dissipation | 70 W | |
| Product Category | MOSFET | |
| Qg - Gate Charge | 19 nC | |
| Rds On - Drain-Source Resistance | 550 mOhms | |
| Rise Time | 12 ns | |
| RoHS | Details | |
| Series | N-channel MDmesh | |
| Technology | Si | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 32 ns | |
| Typical Turn-On Delay Time | 10 ns | |
| Vds - Drain-Source Breakdown Voltage | 600 V | |
| Vgs - Gate-Source Voltage | 25 V | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Resistance | 550 mΩ | |
| Maximum Drain Source Voltage | 600 V | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 70 W | |
| Minimum Gate Threshold Voltage | 2V | |
| Mounting Type | Through Hole | |
| Number of Elements per Chip | 1 | |
| Package Type | TO-220 | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Width | 4.6mm | |
| Brand: | STMicroelectronics | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 | |
| Fall Time: | 15 ns | |
| Id - Continuous Drain Current: | 10 A | |
| Manufacturer: | STMicroelectronics | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | Through Hole | |
| Number of Channels: | 1 Channel | |
| Package / Case: | TO-220-3 | |
| Packaging: | Tube | |
| Pd - Power Dissipation: | 70 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 19 nC | |
| Rds On - Drain-Source Resistance: | 550 mOhms | |
| Rise Time: | 12 ns | |
| Series: | STP10NM60N | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | MDmesh | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 32 ns | |
| Typical Turn-On Delay Time: | 10 ns | |
| Vds - Drain-Source Breakdown Voltage: | 600 V | |
| Vgs - Gate-Source Voltage: | -25 V, +25 V | |
| Vgs th - Gate-Source Threshold Voltage: | 2 V | |
| Вес, г | 5 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 557 КБ
Datasheet STD10NM60N
pdf, 580 КБ
Datasheet STF10NM60N
pdf, 1072 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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