STP20N95K5, Транзистор N-МОП, полевой, 950В 17,5A 250Вт 0,33Ом TO220
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Описание
Описание Транзистор N-МОП, полевой, 950В 17,5A 250Вт 0,33Ом TO220 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Id - Continuous Drain Current: | 17.5 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 250 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 48 nC |
| Rds On - Drain-Source Resistance: | 330 mOhms |
| Series: | STP20N95K5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 950 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 17.5 |
| Maximum Drain Source Resistance (mOhm) | 330@10V |
| Maximum Drain Source Voltage (V) | 950 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 250000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 18 |
| Typical Gate Charge @ 10V (nC) | 48 |
| Typical Gate Charge @ Vgs (nC) | 48@10V |
| Typical Input Capacitance @ Vds (pF) | 1550@100V |
| Typical Rise Time (ns) | 9 |
| Typical Turn-Off Delay Time (ns) | 65 |
| Typical Turn-On Delay Time (ns) | 18 |
| Forward Diode Voltage | 1.5V |
| Maximum Continuous Drain Current | 17.5 A |
| Maximum Drain Source Resistance | 330 mΩ |
| Maximum Drain Source Voltage | 950 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 250 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Package Type | TO-220 |
| Series | MDmesh, SuperMESH |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V |
| Width | 4.6mm |
| Вес, г | 2.05 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 916 КБ
Datasheet
pdf, 952 КБ
Datasheet STW20N95K5
pdf, 1458 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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