STB55NF06LT4
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см. техническую документацию
см. техническую документацию
10 шт. со склада г.Москва, срок 9-10 дней
520 руб.
от 2 шт. —
420 руб.
от 5 шт. —
373 руб.
от 10 шт. —
355.32 руб.
Добавить в корзину 1 шт.
на сумму 520 руб.
Альтернативные предложения3
Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, 60В 55A 95Вт 0,018Ом DІPak
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 20 ns |
| Forward Transconductance - Min | 30 S |
| Height | 4.6 mm |
| Id - Continuous Drain Current | 55 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 95 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 14 mOhms |
| Rise Time | 100 ns |
| RoHS | Details |
| Series | STB55NF06L |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 40 ns |
| Typical Turn-On Delay Time | 20 ns |
| Unit Weight | 0.139332 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 16 V |
| Width | 9.35 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 55 A |
| Maximum Drain Source Resistance | 20 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Maximum Power Dissipation | 95 W |
| Minimum Gate Threshold Voltage | 1V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 27 nC @ 4.5 V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 20 ns |
| Forward Transconductance - Min: | 30 S |
| Id - Continuous Drain Current: | 55 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 95 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 37 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 14 mOhms |
| Rise Time: | 100 ns |
| Series: | STB55NF06L |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 20 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -16 V, +16 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Continuous Drain Current (Id) | 55A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 18mΩ@27.5A, 10V |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.7V@250uA |
| Input Capacitance (Ciss@Vds) | 1.7nF@25V |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Power Dissipation (Pd) | 95W |
| Total Gate Charge (Qg@Vgs) | 37nC@4.5V |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 336 КБ
Datasheet STP55NF06L
pdf, 319 КБ
Datasheet STP55NF06L
pdf, 332 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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