STP9NK60ZFP

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400 шт. со склада г.Москва, срок 10 дней

53 руб.

Кратность заказа 50 шт.

Добавить в корзину 50 шт. на сумму 2 650 руб.

Альтернативные предложения1

Номенклатурный номер: 8023500858

Транзисторы полевые

Описание Транзистор N-МОП, полевой, 600В, 4,4А, 30Вт, TO220FP Характеристики

Current - Continuous Drain (Id) @ 25В°C	7A(Tc)
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1110pF @ 25V
Manufacturer	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-220-3 Full Pack
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	30W(Tc)
Rds On (Max) @ Id, Vgs	950 mOhm @ 3.5A, 10V
Series	SuperMESHв(ў
Supplier Device Package	TO-220FP
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	4.5V @ 100ВµA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	7 A
Maximum Drain Source Resistance	950 mΩ
Maximum Drain Source Voltage	600 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	30 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	TO-220FP
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	38 nC @ 10 V
Width	4.6mm
Вес, г	3