DMN67D8L-7, Транзистор: N-MOSFET; полевой

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12 руб.

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Номенклатурный номер: 8027872644

Артикул: DMN67D8L-7

Бренд: DIODES INC.

Описание Транзистор: N-MOSFET; полевой

Base Product Number	DMN67 ->
Current - Continuous Drain (Id) @ 25В°C	210mA (Ta)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.82nC @ 10V
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	22pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)	340mW (Ta)
Rds On (Max) @ Id, Vgs	5Ohm @ 500mA, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	2.5V @ 250ВµA
Brand	Diodes Incorporated
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	5.6 ns
Forward Transconductance - Min	80 mS
Id - Continuous Drain Current	210 mA
Manufacturer	Diodes Incorporated
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number Of Channels	1 Channel
Packaging	Cut Tape or Reel
Pd - Power Dissipation	340 mW
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	821 pC
Rds On - Drain-Source Resistance	1.5 Ohms
Rise Time	3 ns
Series	DMN67
Subcategory	MOSFETs
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	7.6 ns
Typical Turn-On Delay Time	2.8 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	30 V
Vgs Th - Gate-Source Threshold Voltage	1 V
Вес, г	0.02