STP3NK90ZFP, Транзистор полевой N-канальный 900В 3А 25Вт
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481 шт. со склада г.Москва, срок 10 дней
210 руб.
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от 27 шт. —
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 900В 3А 25Вт
Технические параметры
Корпус | TO-220F | |
кол-во в упаковке | 50 | |
Brand: | STMicroelectronics | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Factory Pack Quantity: Factory Pack Quantity: | 1000 | |
Fall Time: | 18 ns | |
Id - Continuous Drain Current: | 3 A | |
Manufacturer: | STMicroelectronics | |
Maximum Operating Temperature: | +150 C | |
Minimum Operating Temperature: | -55 C | |
Mounting Style: | Through Hole | |
Number of Channels: | 1 Channel | |
Package / Case: | TO-220-3 | |
Packaging: | Tube | |
Pd - Power Dissipation: | 25 W | |
Product Category: | MOSFET | |
Product Type: | MOSFET | |
Qg - Gate Charge: | 22.7 nC | |
Rds On - Drain-Source Resistance: | 4.8 Ohms | |
Rise Time: | 7 ns | |
Series: | STP3NK90ZFP | |
Subcategory: | MOSFETs | |
Technology: | Si | |
Tradename: | SuperMESH | |
Transistor Polarity: | N-Channel | |
Transistor Type: | 1 N-Channel | |
Typical Turn-Off Delay Time: | 45 ns | |
Typical Turn-On Delay Time: | 18 ns | |
Vds - Drain-Source Breakdown Voltage: | 900 V | |
Vgs - Gate-Source Voltage: | -30 V, +30 V | |
Vgs th - Gate-Source Threshold Voltage: | 3 V | |
Automotive | No | |
Channel Mode | Enhancement | |
Channel Type | N | |
Configuration | Single | |
ECCN (US) | EAR99 | |
EU RoHS | Compliant with Exemption | |
Lead Shape | Through Hole | |
Maximum Continuous Drain Current (A) | 3 | |
Maximum Drain Source Resistance (mOhm) | 4800@10V | |
Maximum Drain Source Voltage (V) | 900 | |
Maximum Gate Source Leakage Current (nA) | 10000 | |
Maximum Gate Source Voltage (V) | ±30 | |
Maximum Gate Threshold Voltage (V) | 4.5 | |
Maximum IDSS (uA) | 1 | |
Maximum Operating Temperature (°C) | 150 | |
Maximum Power Dissipation (mW) | 25000 | |
Minimum Operating Temperature (°C) | -55 | |
Mounting | Through Hole | |
Number of Elements per Chip | 1 | |
Packaging | Tube | |
Part Status | Active | |
PCB changed | 3 | |
Pin Count | 3 | |
PPAP | No | |
Process Technology | SuperMESH | |
Product Category | Power MOSFET | |
Standard Package Name | TO | |
Supplier Package | TO-220FP | |
Supplier Temperature Grade | Industrial | |
Tab | Tab | |
Typical Fall Time (ns) | 18 | |
Typical Gate Charge @ 10V (nC) | 22.7 | |
Typical Gate Charge @ Vgs (nC) | 22.7@10V | |
Typical Input Capacitance @ Vds (pF) | 590@25V | |
Typical Rise Time (ns) | 7 | |
Typical Turn-Off Delay Time (ns) | 45 | |
Typical Turn-On Delay Time (ns) | 18 | |
Brand | STMicroelectronics | |
Factory Pack Quantity | 1000 | |
Fall Time | 18 ns | |
Height | 9.3 mm | |
Id - Continuous Drain Current | 3 A | |
Length | 10.4 mm | |
Manufacturer | STMicroelectronics | |
Maximum Operating Temperature | +150 C | |
Minimum Operating Temperature | -55 C | |
Mounting Style | Through Hole | |
Number of Channels | 1 Channel | |
Package / Case | TO-220FP-3 | |
Pd - Power Dissipation | 25 W | |
Rds On - Drain-Source Resistance | 4.8 Ohms | |
Rise Time | 7 ns | |
RoHS | Details | |
Series | N-channel MDmesh | |
Technology | Si | |
Transistor Polarity | N-Channel | |
Transistor Type | 1 N-Channel | |
Typical Turn-Off Delay Time | 45 ns | |
Typical Turn-On Delay Time | 18 ns | |
Vds - Drain-Source Breakdown Voltage | 900 V | |
Vgs - Gate-Source Voltage | 30 V | |
Width | 4.6 mm | |
Maximum Continuous Drain Current | 3 A | |
Maximum Drain Source Resistance | 4.8 Ω | |
Maximum Drain Source Voltage | 900 V | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Maximum Gate Threshold Voltage | 4.5V | |
Maximum Power Dissipation | 25 W | |
Minimum Gate Threshold Voltage | 3V | |
Mounting Type | Through Hole | |
Package Type | TO-220FP | |
Transistor Configuration | Single | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 22.7 nC @ 10 V | |
Вес, г | 3.5 |
Техническая документация
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Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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