STD4NK80ZT4

PartNumber: STD4NK80ZT4
Ном. номер: 8145890526
Производитель: ST Microelectronics
Фото 1/2 STD4NK80ZT4
Фото 2/2 STD4NK80ZT4
Доступно на заказ 202 шт. Отгрузка со склада в г.Москва 5 дней.
94 руб. × = 470 руб.
Минимальное количество для заказа 5 шт.
от 100 шт. — 41 руб.

Описание

The STD4NK80ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, specialties is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.

• 100% Avalanche tested
• Very low intrinsic capacitance
• Very good manufacturing repeatability

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: DPAK, инфо: Полевой транзистор, N-канальный, 800 В, 3 А, 80 Вт

Технические параметры

EU RoHS
Compliant
Product Category
Power MOSFET
Configuration
Single
Technology
SuperMESH
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
800
Maximum Gate Source Voltage (V)
±30
Maximum Continuous Drain Current (A)
3
Maximum Drain Source Resistance (mOhm)
3500@10V
Typical Gate Charge @ Vgs (nC)
22.5@10V
Typical Gate Charge @ 10V (nC)
22.5
Typical Input Capacitance @ Vds (pF)
575@25V
Maximum Power Dissipation (mW)
80000
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Turn-On Delay Time (ns)
13
Typical Turn-Off Delay Time (ns)
35
Typical Fall Time (ns)
32
Typical Rise Time (ns)
12
Mounting
Surface Mount
Package Height (mm)
2.4(Max)
Package Length (mm)
6.6(Max)
Package Width (mm)
6.2(Max)
PCB changed
2
Tab
Tab
Standard Package Name
TO-252
Supplier Package
DPAK
Pin Count
3
Lead Shape
Gull-wing

Дополнительная информация

Datasheet STD4NK80ZT4