STB14NK50ZT4 транзистор: N-MOSFET 500V 14A 0,38Om
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2000 шт. со склада г.Москва, срок 3-4 дня
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Описание
транзистор: N-MOSFET 500V 14A <0,38Om
корпус: D2PAK
аналоги: 2SK3581-01S 2SK3684-01S FMC12N50ES FMC16N50ES FMC20N50E FQB13N50C IXFA12N50P IXFA16N50P IXTA12N50P SPB12N50C3 SPB16N50C3
корпус: D2PAK
аналоги: 2SK3581-01S 2SK3684-01S FMC12N50ES FMC16N50ES FMC20N50E FQB13N50C IXFA12N50P IXFA16N50P IXTA12N50P SPB12N50C3 SPB16N50C3
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 12 ns |
| Forward Transconductance - Min | 12 S |
| Height | 4.6 mm |
| Id - Continuous Drain Current | 14 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 150 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 69 nC |
| Rds On - Drain-Source Resistance | 380 mOhms |
| Rise Time | 16 ns |
| RoHS | Details |
| Series | STB14NK50Z |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 54 ns |
| Typical Turn-On Delay Time | 24 ns |
| Unit Weight | 0.139332 oz |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 9.35 mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 12 S |
| Id - Continuous Drain Current: | 14 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Pd - Power Dissipation: | 150 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 92 nC |
| Rds On - Drain-Source Resistance: | 380 mOhms |
| Rise Time: | 16 ns |
| Series: | STB14NK50Z |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 54 ns |
| Typical Turn-On Delay Time: | 24 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Resistance | 380 mΩ |
| Maximum Drain Source Voltage | 500 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 150 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 69 nC @ 10 V |
| Вес, г | 1.2 |
Техническая документация
Datasheet
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Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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