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STP5NK100Z, Транзистор полевой N-канальный 1KВ 3.5А 125Вт

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22 шт. со склада г.Москва, срок 12 дней

380 руб.

Мин. кол-во для заказа 2 шт.

от 8 шт. — 330 руб.

от 15 шт. — 302 руб.

Добавить в корзину 2 шт. на сумму 760 руб.

Альтернативные предложения3

Номенклатурный номер: 8547059026

Артикул: STP5NK100Z

Бренд: STMicroelectronics

Описание

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы

Транзистор полевой N-канальный 1KВ 3.5А 125Вт

Технические параметры

Корпус	TO-220AB
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	3.5 A
Maximum Drain Source Resistance	3.7 Ω
Maximum Drain Source Voltage	1000 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	125 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Series	MDmesh, SuperMESH
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	42 nC @ 10 V
Width	4.6mm
Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	3.5
Maximum Drain Source Resistance (mOhm)	3700@10V
Maximum Drain Source Voltage (V)	1000
Maximum Gate Source Voltage (V)	±30
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	125000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Packaging	Tube
Part Status	Active
PCB changed	3
PPAP	No
Process Technology	SuperMESH
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-220AB
Tab	Tab
Typical Fall Time (ns)	19
Typical Gate Charge @ 10V (nC)	42
Typical Gate Charge @ Vgs (nC)	42@10V
Typical Input Capacitance @ Vds (pF)	1154@25V
Typical Rise Time (ns)	7.7
Typical Turn-Off Delay Time (ns)	51.5
Typical Turn-On Delay Time (ns)	22.5
Brand	STMicroelectronics
Factory Pack Quantity	1000
Fall Time	19 ns
Forward Transconductance - Min	4 S
Height	9.15 mm
Id - Continuous Drain Current	3.5 A
Length	10.4 mm
Manufacturer	STMicroelectronics
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220-3
Pd - Power Dissipation	125 W
Qg - Gate Charge	42 nC
Rds On - Drain-Source Resistance	3.7 Ohms
Rise Time	7.7 ns
RoHS	Details
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	51.5 ns
Typical Turn-On Delay Time	22.5 ns
Vds - Drain-Source Breakdown Voltage	1000 V
Vgs - Gate-Source Voltage	30 V
Вес, г	2.8