STP11NM80, Транзистор полевой N-канальный 800В 11A

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573 шт. со склада г.Москва, срок 2-3 недели

510 руб.

от 13 шт. — 420 руб.

от 26 шт. — 388 руб.

от 50 шт. — 380 руб.

Добавить в корзину 1 шт. на сумму 510 руб.

Альтернативные предложения2

Номенклатурный номер: 8608110533

Артикул: STP11NM80

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы

Транзистор полевой N-канальный 800В 11A

Корпус	TO-220AB
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	11 A
Maximum Drain Source Resistance	400 mΩ
Maximum Drain Source Voltage	800 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	150 W
Minimum Gate Threshold Voltage	3V
Minimum Operating Temperature	-65 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Series	MDmesh
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	43.6 nC @ 10 V
Width	4.6mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	15 ns
Forward Transconductance - Min:	8 S
Id - Continuous Drain Current:	11 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	150 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	43.6 nC
Rds On - Drain-Source Resistance:	400 mOhms
Rise Time:	17 ns
Series:	STP11NM80
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	46 ns
Typical Turn-On Delay Time:	22 ns
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	3.5