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STN1HNK60, Транзистор полевой N-канальный 600В 0.4А 3.3Вт

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Номенклатурный номер: 8959723317

Артикул: STN1HNK60

Бренд: STMicroelectronics

Описание

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы

Транзистор полевой N-канальный 600В 0.4А 3.3Вт

Технические параметры

Корпус	SOT-223
Base Product Number	STN1HNK60 ->
Current - Continuous Drain (Id) @ 25В°C	400mA (Tc)
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	156pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Other Related Documents	http://www.st.com/web/catalog/sense_power/FM100/CL
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-261-4, TO-261AA
Power Dissipation (Max)	3.3W (Tc)
Rds On (Max) @ Id, Vgs	8.5Ohm @ 500mA, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	SuperMESHв„ў ->
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	3.7V @ 250ВµA
EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Product Category	Power MOSFET
Process Technology	SuperMESH
Configuration	Single Dual Drain
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	±30
Maximum Continuous Drain Current (A)	0.4
Maximum Drain Source Resistance (mOhm)	8500@10V
Typical Gate Charge @ Vgs (nC)	7@10V
Typical Gate Charge @ 10V (nC)	7
Typical Input Capacitance @ Vds (pF)	156@25V
Maximum Power Dissipation (mW)	3300
Typical Fall Time (ns)	25
Typical Rise Time (ns)	5
Typical Turn-Off Delay Time (ns)	19
Typical Turn-On Delay Time (ns)	6.5
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Packaging	Tape and Reel
Automotive	No
Standard Package Name	SOT
Pin Count	4
Supplier Package	SOT-223
Military	No
Mounting	Surface Mount
Package Height	1.8(Max)
Package Length	6.5
Package Width	3.5
PCB changed	3
Tab	Tab
Lead Shape	Gull-wing
Drain Source On State Resistance	8Ом
Power Dissipation	3.3Вт
Количество Выводов	3вывод(-ов)
Максимальная Рабочая Температура	150 C
Монтаж транзистора	Surface Mount
Напряжение Измерения Rds(on)	10В
Напряжение Истока-стока Vds	600В
Непрерывный Ток Стока	500мА
Полярность Транзистора	N Канал
Пороговое Напряжение Vgs	3В
Рассеиваемая Мощность	3.3Вт
Сопротивление во Включенном Состоянии Rds(on)	8Ом
Стиль Корпуса Транзистора	SOT-223
Уровень Чувствительности к Влажности (MSL)	MSL 1-Безлимитный
Brand	STMicroelectronics
Factory Pack Quantity	4000
Fall Time	25 ns
Height	1.8 mm
Id - Continuous Drain Current	400 mA
Length	6.5 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Pd - Power Dissipation	3.3 W
Qg - Gate Charge	7 nC
Rds On - Drain-Source Resistance	8.5 Ohms
Rise Time	5 ns
RoHS	Details
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	19 ns
Typical Turn-On Delay Time	6.5 ns
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	30 V
Width	3.5 mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	4000
Fall Time:	25 ns
Id - Continuous Drain Current:	400 mA
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-223-4
Pd - Power Dissipation:	3.3 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	7 nC
Rds On - Drain-Source Resistance:	8.5 Ohms
Rise Time:	5 ns
Series:	STN1HNK60
Subcategory:	MOSFETs
Technology:	Si
Tradename:	SuperMESH
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	6.5 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	2.25 V
Maximum Continuous Drain Current	400 mA
Maximum Drain Source Resistance	8.5 Ω
Maximum Drain Source Voltage	600 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	3.3 W
Minimum Gate Threshold Voltage	2.25V
Package Type	SOT-223
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	7 nC @ 10 V
Вес, г	0.85