NTZS3151PT1G, Транзистор: P-MOSFET; -20В; -760мА; 210мВт; SOT563-6
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60 руб.
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Технические параметры
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.95 |
| Product Category | Small Signal |
| Configuration | Single Quad Drain |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Continuous Drain Current (A) | 0.86 |
| Maximum Drain Source Resistance (mOhm) | 150@4.5V |
| Typical Gate Charge @ Vgs (nC) | 5.6@4.5V |
| Typical Input Capacitance @ Vds (pF) | 458@16V |
| Maximum Power Dissipation (mW) | 210 |
| Typical Fall Time (ns) | 18 |
| Typical Rise Time (ns) | 12 |
| Typical Turn-Off Delay Time (ns) | 23.7 |
| Typical Turn-On Delay Time (ns) | 5 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Standard Package Name | SOT |
| Pin Count | 6 |
| Supplier Package | SOT-563 |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 0.55 |
| Package Length | 1.6 |
| Package Width | 1.2 |
| PCB changed | 6 |
| Lead Shape | Flat |
| Brand: | onsemi |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Fall Time: | 12 ns |
| Id - Continuous Drain Current: | 950 mA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-563-6 |
| Pd - Power Dissipation: | 170 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 5.6 nC |
| Rds On - Drain-Source Resistance: | 195 mOhms |
| Rise Time: | 12 ns |
| Series: | NTZS3151P |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 23.7 ns |
| Typical Turn-On Delay Time: | 5 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Continuous Drain Current | 950 mA |
| Maximum Drain Source Resistance | 240 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 210 mW |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | SOT-563 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 5.6 nC @ 4.5 V |
| Width | 1.3mm |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 192 КБ
Datasheet NTZS3151PT1G
pdf, 96 КБ
Datasheet NTZS3151PT1G
pdf, 172 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
