FDS6898A, Транзистор N-MOSFET x2, полевой, 20В, 9,4А, 2Вт, SO8, PowerTrench®

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310 руб.

от 5 шт. — 240 руб.

от 25 шт. — 187 руб.

от 100 шт. — 161.36 руб.

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Номенклатурный номер: 8002560610

Артикул: FDS6898A

Описание Транзистор N-MOSFET x2, полевой, 20В, 9,4А, 2Вт, SO8, PowerTrench® Характеристики

Current - Continuous Drain (Id) @ 25В°C	9.4A
Drain to Source Voltage (Vdss)	20V
FET Feature	Logic Level Gate
FET Type	2 N-Channel(Dual)
Gate Charge (Qg) (Max) @ Vgs	23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1821pF @ 10V
Manufacturer	ON Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	8-SOIC(0.154", 3.90mm Width)
Packaging	Tape & Reel(TR)
Part Status	Active
Power - Max	900mW
Rds On (Max) @ Id, Vgs	14mOhm @ 9.4A, 4.5V
Series	PowerTrenchВ®
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	1.5V @ 250ВµA
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	16 ns
Forward Transconductance - Min:	47 S
Id - Continuous Drain Current:	9.4 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	SOIC-8
Part # Aliases:	FDS6898A_NL
Pd - Power Dissipation:	2 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	23 nC
Rds On - Drain-Source Resistance:	14 mOhms
Rise Time:	15 ns
Series:	FDS6898A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	500 mV
Вес, г	0.217