FCD5N60TM

Изображения служат только для ознакомления,
см. техническую документацию

640 руб.

от 2 шт. — 530 руб.

от 5 шт. — 455 руб.

от 8 шт. — 430.92 руб.

Добавить в корзину 1 шт. на сумму 640 руб.

Номенклатурный номер: 8002985022

Электроэлемент

Описание Транзистор: N-MOSFET, полевой, 600В, 2,9А, 54Вт, DPAK Характеристики

Channel Mode	Enhancement
Continuous Drain Current	4.6(A)
Drain-Source On-Volt	600(V)
Gate-Source Voltage (Max)	±30(V)
Mounting	Surface Mount
Number of Elements	1
Operating Temp Range	-55C to 150C
Operating Temperature Classification	Military
Package Type	DPAK
Packaging	Tape and Reel
Pin Count	2+Tab
Polarity	N
Power Dissipation	54(W)
Rad Hardened	No
Type	Power MOSFET
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	22 ns
Forward Transconductance - Min:	3.8 S
Id - Continuous Drain Current:	4.6 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	DPAK-3(TO-252-3)
Pd - Power Dissipation:	54 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	16 nC
Rds On - Drain-Source Resistance:	810 mOhms
REACH - SVHC:	Details
Rise Time:	40 ns
Series:	FCD5N60
Subcategory:	MOSFETs
Technology:	Si
Tradename:	SuperFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	47 ns
Typical Turn-On Delay Time:	12 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.3