FDMC8878
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Описание
Электроэлемент
MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:16.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:2.1W; Transistor Case Style:Power 33; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:9.6A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:60A; SMD Marking:FDMC8878; Termination Type:Surface Mount Device; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Технические параметры
Channel Mode | Enhancement |
Continuous Drain Current | 9.6(A) |
Drain-Source On-Volt | 30(V) |
Gate-Source Voltage (Max) | '±20(V) |
Mounting | Surface Mount |
Number of Elements | 1 |
Operating Temp Range | -55C to 150C |
Operating Temperature Classification | Military |
Package Type | WDFN EP |
Packaging | Tape and Reel |
Pin Count | 8 |
Polarity | N |
Power Dissipation | 2.1(W) |
Rad Hardened | No |
Type | Power MOSFET |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 3 ns |
Id - Continuous Drain Current: | 16.5 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | WDFN-8 |
Pd - Power Dissipation: | 31 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 18 nC |
Rds On - Drain-Source Resistance: | 9.6 mOhms |
Rise Time: | 4 ns |
Series: | FDMC8878 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | PowerTrench |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 20 ns |
Typical Turn-On Delay Time: | 8 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Вес, г | 0.5 |
Техническая документация
Datasheet
pdf, 243 КБ
Документация
pdf, 428 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов